APA Style
ELIAS, PETRUS JOHANNES HENRICUS. (1993).
Modeling of hot-electron effects in si mos devices (1).
Eindhoven:
Technische Universiteit Eindhoven.
Chicago Style
ELIAS, PETRUS JOHANNES HENRICUS.
Modeling of hot-electron effects in si mos devices.
1
Eindhoven:
Technische Universiteit Eindhoven,
1993.
TXB.
MLA Style
ELIAS, PETRUS JOHANNES HENRICUS.
Modeling of hot-electron effects in si mos devices.
1
Eindhoven:
Technische Universiteit Eindhoven,
1993.
TXB.
Turabian Style
ELIAS, PETRUS JOHANNES HENRICUS.
Modeling of hot-electron effects in si mos devices.
1
Eindhoven:
Technische Universiteit Eindhoven,
1993.
TXB.